vishay BAS16WS document number 85752 rev. 3, 24-jun-03 vishay semiconductors www.vishay.com 1 17431 small signal diodes features ? silicon epitaxial planar diode fast switching diode also available in case sot-23 with designation bas16 mechanical data case: sod-323 plastic case weight: approx. 4 mg marking: a6 packaging codes/options: d5/10 k per 13" reel (8 mm tape), 30 k/box d6/3 k per 7" reel (8 mm tape), 30 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided electrodes are kept at ambient temperature thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v forward current (continuous) i f 250 ma non-repetitive peak forward current t = 1 s i fsm 2.0 a t = 1 ms i fsm 1.0 a t = 1 s i fsm 0.5 a power dissipation p tot 200 1) mw parameter test condition symbol value unit maximum junction temperature t j 150 c storage temperature t s - 65 to 150 c parameter test condition symbol min ty p. max unit forward voltage i f = 1 ma v f 715 mv i f = 10 ma v f 855 mv i f = 50 ma v f 1.00 v i f = 150 ma v f 1.25 v leakage current v r = 25 v, t j = 150 c i r 30 a v r = 75 v i r 1 a v r = 75 v, t j = 150 c i r 50 a
www.vishay.com 2 document number 85752 rev. 3, 24-jun-03 vishay BAS16WS vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) capacitance v r = 0; f = 1 mhz c tot 2 pf reverse recovery time i f = 10 ma to i r = 10 ma, i r = 1 ma, r l = 100 ? t rr 6 ns thermal resistance junction to ambient air r ja 650 c/w parameter test condition symbol min ty p. max unit figure 1. forward characteristics figure 2. dynamic forward resistance vs. forward current 18105 17438 figure 3. admissible power dissipation vs. ambient temperature figure 4. relative capacitance vs. reverse voltage 18185 17440
vishay BAS16WS document number 85752 rev. 3, 24-jun-03 vishay semiconductors www.vishay.com 3 figure 5. leakage current vs. junction temperature 17441 18106 figure 6. admissible repetitive peak forward current vs. pulse duration
www.vishay.com 4 document number 85752 rev. 3, 24-jun-03 vishay BAS16WS vishay semiconductors package dimensions in inches (mm) mounting pad layout .006 (0.15) max. .010 (0.25) min. .012 (0.3) .076 (1.95) .112 (2.85) .059 (1.5) .004 (0.1) max. .049 (1.25) max. cathode band .100 (2.55) .065 (1.65) .043 (1.1) 17443 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) 17444
vishay BAS16WS document number 85752 rev. 3, 24-jun-03 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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